| PART |
Description |
Maker |
| 2SK3074 EE08686 |
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
From old datasheet system
RF POWER MOSFET FOR VHF - AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| AMF-3D-001080-18-13P AMF-4F-00100100-15-10P AMF-4F |
100 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
5400 MHz - 5900 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
500 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
30000 MHz - 33000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
4400 MHz - 5100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
1500 MHz - 1800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
6000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
38000 MHz - 42000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
40000 MHz - 45000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
41000 MHz - 43000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
12000 MHz - 24000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
3000 MHz - 3500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
250 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
15000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
30 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
18000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
36000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
1000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
7900 MHz - 8400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
2100 MHz - 2400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
200 MHz - 400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
50 MHz - 100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
6400 MHz - 7200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
15500 MHz - 16500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 2000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
7250 MHz - 7750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
950 MHz - 1450 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
6000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
9500 MHz - 10500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
800 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
1500 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
9000 MHz - 10000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
8000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
4000 MHz - 10000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
18000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
10 MHz - 2000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
500 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| 2SC5544YZ-TR-E 2SC5544YZ-TL-E |
Silicon NPN Epitaxial VHF / UHF wide band amplifier
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.59 MM HEIGHT, MODIFIED SC-89, MFPAK-3
|
Renesas Electronics Corporation
|
| MGF7176C 7176C |
3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER
From old datasheet system
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| S-AU82L |
FM RF POWER AMPLIFIER MODULE for UHF BAND
|
Toshiba Semiconductor
|
| MGF7114C |
UHF BAND GaAs POWER AMPLIFIER
|
Mitsubishi
|
| 2SC2783 |
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA
|
| 2SC4320 E000939 |
From old datasheet system
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
NPN EPITAXIAL PLANAR TYPE (VHF~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK307407 2SK3074 |
SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| S-AU57 |
UHF BAND HAM FA RF POWER AMPLIFIER MODULE HAND-HELD TRANSCEIVER
|
Toshiba Semiconductor
|
| S-AU94 |
RF POWER AMPLIFIER MODULE UHF BAND FM POWER AMPLIFIER MODULE HAND-HELD TRANSCEIVER
|
Toshiba Semiconductor
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
